Recently, a new kind of spintronics materials, bipolar magnetic semiconductor(BMS), has been proposed. The spin polarization of BMS can be convenientlycontrolled by a gate voltage, which makes it very attractive in deviceengineering. Now, the main challenge is finding more BMS materials. In thisarticle, we propose that hydrogenated wurtzite SiC nanofilm is atwo-dimensional BMS material. Its BMS character is very robust under the effectof strain, substrate, or even a strong electric field. The proposedtwo-dimensional BMS material paves the way to use this promising new materialin an integrated circuit.
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